A Physics based Mosfet Noise Model for Nanoscale Applications
Suveetha P Dhanaselvam, N B Balamurugan, Lourdy V Nivethitha, S Saranya and V Prathibha. Article: A Physics based Mosfet Noise Model for Nanoscale Applications. IJCA Proceedings on International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences ICIIIOES(7):6-9, December 2013. Full text available. BibTeX
@article{key:article,
author = {P. Suveetha Dhanaselvam and N. B. Balamurugan and V. Lourdy Nivethitha and S. Saranya and V. Prathibha},
title = {Article: A Physics based Mosfet Noise Model for Nanoscale Applications},
journal = {IJCA Proceedings on International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences},
year = {2013},
volume = {ICIIIOES},
number = {7},
pages = {6-9},
month = {December},
note = {Full text available}
}
Abstract
Recently MOSFET has been considered as an important aspirant in the field of VLSI technology since it minimizes short-channel effect. FinFETs are promising substitute for CMOS at the nanoscale for meeting the challenges being posed by the scaling of conventional MOSFET. Continuous scaling of technologies towards the nanometer range will severely enhance noise implication. In this paper, a physics based MOSFET noise model that can accurately predict the noise characteristics over all the three operating regions known as subthreshold region, weak inversion region and strong inversion region is proposed . The physics based expressions for thermal noise has been derived and experimentally verified with corresponding graphs by using MATLAB simulation.
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